Distinct photoluminescence in multilayered van der Waals heterostructures of MoS2/WS2/ReS2 and BN

摘要

Van der Waals heterostructures of (TMDL=1/BNL=1-4/TMDL=1/BNL=1-4), [TMD =MoS2, WS2, and ReS2] are grown on c-plane sapphire substrate by pulsed laserdeposition under slow kinetic condition. The heterostructure systems showstrong emission around 2.3 eV and subsidiary peaks around 2.8, 1.9, 1.7 and 1.5eV. BN and TMDs forms type-I heterojunction and the emission peaks observed areexplained in terms of various band to band recombination processes andconsidering relative orientation of Brillouin Zones. The emission peak around2.3eV is promising for solar and photovoltaic application. The observation isalmost similar for three different heterostructure systems.